unisonic technologies co., ltd 16n65k-mt preliminary power mosfet www.unisonic.com.tw 1 of 5 copyright ? 2015 unisonic technologies co., ltd qw-r502-b14.d 16a, 650v n-channel power mosfet ? description the utc 16n65k-mt is an n-channel mode power mosfet using utc?s advanced technology to provide customers with planar stripe and dmos technology. this technology allows a minimum on-state resistance and superior sw itching performance. it also can withstand high energy pulse in the avalanche and commutation mode. the utc 16n65k-mt is generally applied in high efficiency switch mode power supplies, active power factor correction and electronic lamp ballasts based on half bridge topology. ? features * r ds(on) < 0.54 ? @ v gs = 10 v, i d = 8 a * high switching speed * 100% avalanche tested ? symbol ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing 16N65KL-TF2-T 16n65kg-tf2-t to-220f2 g d s tube note: pin assignment: g: gate d: drain s: source (1) t: tube (2) tf2: to-220f2 (3) l: lead free, g: halogen free and lead free 16N65KL-TF2-T (1)packing type (2)package type (3)green package ? marking
16n65k-mt preliminary power mosfet unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r502-b14.d ? absolute maximum ratings (t c =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 650 v gate-source voltage v gss 30 v continuous (t c =25c) i d 16 (note 2) a drain current pulsed (note 3) i dm 64 (note 2) a avalanche current (note 3) i ar 16 a single pulsed (note 4) e as 780 mj avalanche energy repetitive (note 5) e ar 20 mj peak diode recovery dv/dt (note 5) dv/dt 4.5 v/ns power dissipation (t c =25c) 62 w linear derating factor above t c =25c p d 0.49 w/c junction temperature t j +150 c storage temperature t stg -55~+150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. drain current limited by maximum junction temperature 3. repetitive rating: pulse width limit ed by maximum junction temperature 4. l = 6.1mh, i as = 16a, v dd = 50v, r g = 25 ? , starting t j = 25c 5. i sd 16a, di/dt 200a/s, v dd bv dss , starting t j = 25c ? thermal data parameter symbol ratings unit junction to ambient ja 62.5 c/w junction to case jc 2.0 c/w ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 650 v v ds =650v, v gs =0v 1 a drain-source leakage current i dss v ds =520v, v gs =0v, t c =125c 10 a forward v gs =+30v, v ds =0v +100 na gate- source leakage current reverse i gss v gs =-30v, v ds =0v -100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =250a 2.0 4.0 v static drain-source on-state resistance r ds(on) v gs =10v, i d =8a 0.35 0.54 ? dynamic parameters input capacitance c iss 1078 pf output capacitance c oss 225 pf reverse transfer capacitance c rss v gs =0v, v ds =25v, f=1.0mhz 10 pf switching parameters turn-on delay time t d(on) 112 ns rise time t r 186 ns turn-off delay time t d(off) 335 ns fall-time t f v ds =30v, i d =0.5a, r g =25 ? (note 1, 2) 186 ns total gate charge q g 57 nc gate to source charge q gs 15.4 nc gate to drain charge q gd v gs =10v, v ds =50v, i d =1.3a (note 1, 2) 15.8 nc source- drain diode ratings and characteristics maximum body-diode continuous current i s 16 a maximum body-diode pulsed current i sm 64 a drain-source diode forward voltage v sd i s =16a, v gs =0v 1.4 v notes: 1. pulse test: pulse width 300s, duty cycle 2% 2. essentially independent of operating temperature
16n65k-mt preliminary power mosfet unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r502-b14.d ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test - + peak diode recovery dv/dt test circuit p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) v gs = p.w. period peak diode recovery dv/dt waveforms
16n65k-mt preliminary power mosfet unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r502-b14.d ? test circuits and waveforms (cont.) v ds 90% 10% v gs t d(on) t r t d(off) t f switching test circuit switching waveforms 10v charge q gs q gd q g v gs gate charge test circuit gate charge waveform v dd t p time bv dss i as i d(t) v ds(t) unclamped inductive switching test circuit unclamped inductive switching waveforms
16n65k-mt preliminary power mosfet unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r502-b14.d utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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